Good Linearity of hFE
High Collector Current
Wide Area of Safe Operation
High Reliability
Complement to Type 2SB757
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Audio amplifier applications
Series regulators a
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isc Silicon NPN Power Transistor
DESCRIPTION ·Good Linearity of hFE ·High Collector Current ·Wide Area of Safe Operation ·High Reliability ·Complement to Type 2SB757 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Audio amplifier applications ·Series regulators applications ·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
40
V
VEBO
Emitter-Base voltage
5
V
IC
Collector Current-Continuous
15
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
5
A
80
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth
2SD847 Datasheet
