2SD849 - NPN Transistor

Inchange Semiconductor

General Description

High Breakdown Voltage- : VCBO= 1500V (Min) Low Collector Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 3A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

applications.

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2SD849 npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SD849
Manufacturer	Inchange Semiconductor
File Size	199.28 KB
Description	NPN Transistor
Datasheet	2SD849 Datasheet

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isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Low Collector Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC≤90℃ TJ Junction Temperature 5 A 25 W 130 ℃ Tstg Storage Temperature Range -65~130 ℃ 2SD849 isc website：www.iscsemi.