2SD855 - NPN Transistor

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) Good Linearity of hFE Wide Area of Safe Operation Complement to Type 2SB760 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Medium power amplifier applications.

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2SD855 npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SD855
Manufacturer	Inchange Semiconductor
File Size	208.65 KB
Description	NPN Transistor
Datasheet	2SD855 Datasheet

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB760 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD855 isc website：www.iscsemi.