2SD855 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·plement to Type 2SB760 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Medium power amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD855 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS...