2SD866 - NPN Transistor

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) Good Linearity of hFE Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@IC= 5A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applicat

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Datasheet Details

Part number	2SD866
Manufacturer	Inchange Semiconductor
File Size	210.34 KB
Description	NPN Transistor
Datasheet	2SD866 Datasheet

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 15 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD866 isc website：www.iscsemi.