High DC Current Gain
: hFE= 700(Min.)@ IC= 1A, VCE= 4V
High Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 180V(Min)
High Reliability
Good Linearity of hFE
Wide Area of Safe Operation
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD930
DESCRIPTION ·High DC Current Gain
: hFE= 700(Min.