Inchange Semiconductor 2SD935
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SD935 |
|---|---|
| Datasheet | 2SD935 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●With TO-3 Package●Low collector saturation voltage
●Good Linearity of hFE
●Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS
●Designed for color TV horizontal deflection driver and general purpose applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 250 V VEBO IC Emitter-Base Voltage Collector Current-Continuous 7 V 5 A ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 60 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD935ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage ICBO Colle...