Datasheet Details
| Part number | 2SD935 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.50 KB |
| Description | NPN Transistor |
| Datasheet | 2SD935-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD935.
| Part number | 2SD935 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.50 KB |
| Description | NPN Transistor |
| Datasheet | 2SD935-INCHANGE.pdf |
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·With TO-3 Package ·Low collector saturation voltage ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for color TV horizontal deflection driver and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 250 V VEBO IC Emitter-Base Voltage Collector Current-Continuous 7 V 5 A ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 60 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD935 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
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