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2SD930 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor.

General Description

·High DC Current Gain : hFE= 700(Min.)@ IC= 1A, VCE= 4V ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 180V(Min) ·High Reliability ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color & B/W TV power supply ·Active power filter ·Series regulators ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICP Collector Current-Peak 8 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 0.5 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD930 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA, IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;

IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 3mA;

IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A ,IB= 50mA VBE(sat) Base-Emitter Saturation Voltage IC= 1.5A ,IB= 50mA ICBO Collector Cutoff current VCB= 200V, IE= 0 ICEO Collector Cutoff Current VCE= 180V, IB= 0 IEBO Emitter Cutoff Current VEB= 5V;

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