2SD930 datasheet by Inchange Semiconductor.
| Part number | 2SD930 |
|---|---|
| Datasheet | 2SD930-INCHANGE.pdf |
| File Size | 199.74 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
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hFE= 700(Min.)@ IC= 1A, VCE= 4V ·High Collector-Emitter Breakdown Voltage- : 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD930 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA, IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 3mA;.
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