2SD930 Datasheet (PDF) Download
Inchange Semiconductor
2SD930

Description

High DC Current Gain : hFE= 700(Min.)@ IC= 1A, VCE= 4V High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 180V(Min) High Reliability Good Linearity of hFE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation.