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2SD935 - NPN Transistor

General Description

With TO-3 Package Low collector saturation voltage Good Linearity of hFE

and reliable operation.

purpose applications.

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD935 DESCRIPTION ·With TO-3 Package ·Low collector saturation voltage ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for color TV horizontal deflection driver and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 250 V VEBO IC Emitter-Base Voltage Collector Current-Continuous 7 V 5 A ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 60 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website:www.iscsemi.