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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD935
DESCRIPTION ·With TO-3 Package ·Low collector saturation voltage ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS ·Designed for color TV horizontal deflection driver and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
250
V
VCEO
Collector-Emitter Voltage
250
V
VEBO IC
Emitter-Base Voltage Collector Current-Continuous
7
V
5
A
ICM
Collector Current-Pulse
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
10
A
60
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
isc website:www.iscsemi.