2SD953 - NPN Transistor

Inchange Semiconductor

General Description

High Breakdown Voltage- : VCBO= 1500V (Min) Low Collector Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 4.5A Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line-operated horizontal deflecti

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Datasheet Details

Part number	2SD953
Manufacturer	Inchange Semiconductor
File Size	201.98 KB
Description	NPN Transistor
Datasheet	2SD953 Datasheet

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isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Low Collector Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 4.5A ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 5 A ICP Collector Current- Peak PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 7 A 95 W 130 ℃ Tstg Storage Temperature Range -65~130 ℃ 2SD953 isc website：www.iscsemi.