Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
Good Linearity of hFE
Low Collector Saturation Voltage
: VCE(sat)= 0.5V(Max)@IC= 2A
Complement to Type 2SB867
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Design
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc Silicon NPN Power Transistor
2SD959
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage
: VCE(sat)= 0.5V(Max)@IC= 2A ·Complement to Type 2SB867 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
130
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
6
A
30
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website：www.iscsemi.
2SD959 Datasheet
