Datasheet Details
| Part number | 2SD970 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 206.55 KB |
| Description | NPN Transistor |
| Datasheet |
 2SD970-INCHANGE.pdf
|
| Part number | 2SD970 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 206.55 KB |
| Description | NPN Transistor |
| Datasheet |
2SD970-INCHANGE.pdf
|
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) High DC Current Gain : hFE= 1000(Min) @IC= 4A Low Saturation Voltage Complement to Type 2SB791 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium speed and power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-B
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