2SD970 Datasheet - INCHANGE

NPN Transistor

2SD970 General Description

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) *High DC Current Gain : hFE= 1000(Min) @IC= 4A *Low Saturation Voltage *Complement to Type 2SB791 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for medium .

2SD970 Datasheet (206.55 KB)

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2SD970

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INCHANGE

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206.55 KB

Description:

Npn transistor.

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2SD970 NPN Transistor INCHANGE

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2SD970 General Description

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