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2SD985 - NPN Transistor

General Description

Collector Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min.) DC Current Gain- : hFE = 2000(Min) @ IC= 1A Low Collector Saturation Voltage Complement to Type 2SB794 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS The

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector–Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min.) ·DC Current Gain- : hFE = 2000(Min) @ IC= 1A ·Low Collector Saturation Voltage ·Complement to Type 2SB794 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·They are suitable for use to operate from IC without predriver, such as hammer driver. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Pulse 3.0 A IB Base Current Collector Power Dissipation Ta=25℃ PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 0.15 A 1.