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2ST31A - NPN Transistor

Description

Collector-Emitter sustaining Voltage : VCEO=60V(Min) Good Linearity of hFE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Linear and switching industrial applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter sustaining Voltage : VCEO=60V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Linear and switching industrial applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A IB Base Current- Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 40 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2ST31A isc website：www.iscsemi.
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