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INCHANGE

2ST501T Datasheet Preview

2ST501T Datasheet

NPN Transistor

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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2ST501T
DESCRIPTION
·Low Collector Saturation Voltage
·High DC Current Gain
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Audio power amplifiers
·Relay & solenoid drivers
·Motor controls
·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO(SUS) Collector-Emitter Voltage
330
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
12
A
100
W
150
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
-55~150
MAX UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.25 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

2ST501T Datasheet Preview

2ST501T Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
2ST501T
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO
Emitter-Base Breakdown Voltage IE= 150mA; IC= 0
VCEO(sus)
Collector-Emitter
Voltage (IB = 0 )
Sustaining IC = 10 mA,
ICEO
Collector Cut-off Current (IB = 0) VCE = 300 V
ICBO
Collector Cutoff Current
VCB= 300V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC=0
hFE
VCE(sat)
VBE(sat)
DC Current Gain
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
IC= 2A; VCE= 2V
IC= 2A; IB= 2mA
IC= 2A; IB= 2mA
MIN TYP. MAX UNIT
6
V
330
V
0.1 mA
0.1 mA
2
mA
2000
1.5
V
2.0
V
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number 2ST501T
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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