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2ST501T - NPN Transistor

Description

Low Collector Saturation Voltage High DC Current Gain Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio power amplifiers Relay & solenoid drivers Motor controls General purpose power amplifiers ABSOLUTE MAXIMUM

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2ST501T DESCRIPTION ·Low Collector Saturation Voltage ·High DC Current Gain ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio power amplifiers ·Relay & solenoid drivers ·Motor controls ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO(SUS) Collector-Emitter Voltage 330 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 12 A 100 W 150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER -55~150 ℃ MAX UNIT Rth j-c Ther
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