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3DA98B Datasheet Preview

3DA98B Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
DESCRIPTION
·High DC Current Gain-
: hFE>15@IC= 1.5A
·Excellent Safe Operating Area
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use as an output device in complementary
audio amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
80
V
VCEO Collector-Emitter Voltage
70
V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current-Continuous
5
A
PC
Collector Power Dissipation@TC=25
15
W
TJ
Junction Temperature
175
Tstg
Storage Temperature Range
-55-175
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
2.5
UNIT
/W
3DA98B
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




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3DA98B Datasheet Preview

3DA98B Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(BR) Collector-Emitter Breakdown Voltage IC=10mA; IB=0
VCE(sat) Collector-Emitter Saturation Voltage IC=3A; IB=0.6A
ICBO
Collector Cutoff Current
VCB=60V; IE=0
IEBO
Emitter Cutoff current
VEB=2V; IC=0
hFE
DC Current Gain
IC=1.5A ; VCE=5V
3DA98B
MIN TYP MAX UNIT
70
V
2
V
2.0 mA
1.0 mA
10
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number 3DA98B
Description NPN Transistor
Maker INCHANGE
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3DA98B Datasheet PDF






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