Datasheet Details
| Part number | 3DD104A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 178.99 KB |
| Description | NPN Transistor |
| Datasheet |
 3DD104A Datasheet
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| Part number | 3DD104A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 178.99 KB |
| Description | NPN Transistor |
| Datasheet |
3DD104A Datasheet
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·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous 3 A PD Total Power Dissipation@TC=75℃ 50 W TJ Max.Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 2.0 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD104A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCEO Collector-Emitter Sustaining Voltage IC= 5mA;
IB= 0 BVCBO Collector-Base Sustaining Voltage IC= 5mA;
IE= 0 BVEBO Emitter-Base Sustaining Voltage IE= 5mA;
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product.
| Part Number | Description |
|---|---|
| 3DD104B | NPN Transistor |
| 3DD104C | NPN Transistor |
| 3DD104D | NPN Transistor |
| 3DD104E | NPN Transistor |
| 3DD100A | NPN Transistor |
| 3DD100B | NPN Transistor |
| 3DD100C | NPN Transistor |
| 3DD100D | NPN Transistor |
| 3DD100E | NPN Transistor |
| 3DD101C | NPN Transistor |