3DD102B Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.) ·DC Current Gain- : hFE= 20(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage-.
3DD102B Details
| Part number | 3DD102B |
|---|---|
| Datasheet | 3DD102B Datasheet PDF (Download) |
| File Size | 185.16 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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