3DD102B
Description
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.) DC Current Gain- : hFE= 20(Min.)@IC= 2A Collector-Emitter Saturation Voltage- : VCE(sat)= 0.8V(Max)@ IC= 2.5A.
- Part: 3DD102B
- Description: Silicon NPN Power Transistor
- Category: Transistor
- Manufacturer: Inchange Semiconductor
- Size: 185.16 KB
Datasheets by Manufacturer
- 3DD102D — Inchange Semiconductor — NPN Transistor
- 3DD102 — Shaanxi Qunli Electric — NPN Silicon Low Frequency High Power Transistor
- 3DD101D — SJ — Power Transistor
- 3DD101 — Shaanxi Qunli Electric — NPN Silicon Low Frequency High Power Transistor
- 3DD101A — SJ — Power Transistor
- 3DD100A — Inchange Semiconductor — NPN Transistor
- 3DD101C — SJ — Power Transistor
- 3DD100B — Inchange Semiconductor — NPN Transistor
- 3DD101E — SJ — Power Transistor
- 3DD104E — Inchange Semiconductor — NPN Transistor