3DD102B - Silicon NPN Power Transistor

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Inchange Semiconductor

Datasheet Details

Part number	3DD102B
Manufacturer	Inchange Semiconductor
File Size	185.16 KB
Description	Silicon NPN Power Transistor
Datasheet	3DD102B Datasheet
Additional preview pages of the 3DD102B datasheet.

Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.) DC Current Gain- : hFE= 20(Min.)@IC= 2A Collector-Emitter Saturation Voltage- : VCE(sat)= 0.8V(Max)@ IC= 2.5A APPLICATIONS

power supply applications.

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Published: Jun 18, 2016 |