Datasheet4U Logo Datasheet4U.com

3DD100A - NPN Transistor

General Description

With TO-66 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor AB

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
3DD100 NPN Silicon Low Frequency High Power Transistor Shaanxi Qunli Electric
3DD10 NPN Silicon Low Frequency High Power Transistor Shaanxi Qunli Electric
3DD101 NPN Silicon Low Frequency High Power Transistor Shaanxi Qunli Electric
3DD101A Power Transistor SJ
3DD101A Silicon NPN Power Transistor Inchange Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
3DD100B NPN Transistor
3DD100C NPN Transistor
3DD100D NPN Transistor
3DD100E NPN Transistor
3DD101C NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor DESCRIPTION ·With TO-66 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous 1.5 A PD Total Power Dissipation@TC=75℃ 20 W TJ Max.Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 5.0 UNIT ℃/W 3DD100A isc website：www.iscsemi.