Datasheet Details
| Part number | 3DD100A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 182.45 KB |
| Description | NPN Transistor |
| Datasheet | 3DD100A-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 3DD100A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 182.45 KB |
| Description | NPN Transistor |
| Datasheet | 3DD100A-INCHANGE.pdf |
|
|
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·With TO-66 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous 1.5 A PD Total Power Dissipation@TC=75℃ 20 W TJ Max.Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 5.0 UNIT ℃/W 3DD100A isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCEO Collector-Emitter Sustaining Voltage IC= 1mA;
IB= 0 BVCBO Collector-Base Sustaining Voltage IC= 1mA;
IE= 0 BVEBO Emitter-Base Sustaining Voltage IE= 1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| Shaanxi Qunli Electric | 3DD100 | NPN Silicon Low Frequency High Power Transistor | Shaanxi Qunli Electric |
| Part Number | Description |
|---|---|
| 3DD100B | NPN Transistor |
| 3DD100C | NPN Transistor |
| 3DD100D | NPN Transistor |
| 3DD100E | NPN Transistor |
| 3DD101C | NPN Transistor |
| 3DD101D | NPN Transistor |
| 3DD101E | NPN Transistor |
| 3DD102D | NPN Transistor |
| 3DD103E | NPN Transistor |
| 3DD104A | NPN Transistor |