3DD100E Description
1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD100E TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCEO Collector-Emitter Sustaining Voltage IC= 1mA; IB= 0 BVCBO Collector-Base Sustaining Voltage IC= 1mA; IE= 0 BVEBO Emitter-Base Sustaining Voltage IE= 1mA;.