3DD102A - Silicon NPN Power Transistor

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Inchange Semiconductor

Datasheet Details

Part number	3DD102A
Manufacturer	Inchange Semiconductor
File Size	209.11 KB
Description	Silicon NPN Power Transistor
Datasheet	3DD102A Datasheet
Additional preview pages of the 3DD102A datasheet.

Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) DC Current Gain- : hFE= 20(Min.)@IC= 2A Collector-Emitter Saturation Voltage- : VCE(sat)= 0.8V(Max)@ IC= 2.5A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed

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Published: Jun 18, 2016 |