3DD102A - Silicon NPN Power Transistor

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) DC Current Gain- : hFE= 20(Min.)@IC= 2A Collector-Emitter Saturation Voltage- : VCE(sat)= 0.8V(Max)@ IC= 2.5A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed

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3DD102A silicon npn power transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	3DD102A
Manufacturer	Inchange Semiconductor
File Size	209.11 KB
Description	Silicon NPN Power Transistor
Datasheet	3DD102A Datasheet

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Other Datasheets by Inchange Semiconductor

Part Number	Description
3DD102	Silicon NPN Power Transistor
3DD102B	Silicon NPN Power Transistor
3DD102C	Silicon NPN Power Transistor
3DD101A	Silicon NPN Power Transistor
3DD101B	Silicon NPN Power Transistor

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·DC Current Gain- : hFE= 20(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.8V(Max)@ IC= 2.