Datasheet Details
| Part number | 3DD102 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 151.04 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 3DD102-InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification.
| Part number | 3DD102 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 151.04 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 3DD102-InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·DC Current Gain- : hFE= 20(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.8V(Max)@ IC= 2.5A APPLICATIONS ·Designed for power amplifier , DC Transform T-Shirt SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6V IC Collector Current-Continuous 5A PC Collector Power Dissipation@TC=75℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 2.0 ℃/W isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification 3DD102 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARA
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| Shaanxi Qunli Electric | 3DD102 | NPN Silicon Low Frequency High Power Transistor | Shaanxi Qunli Electric |
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3DD102D | NPN Transistor | INCHANGE |
| Part Number | Description |
|---|---|
| 3DD102A | Silicon NPN Power Transistor |
| 3DD102B | Silicon NPN Power Transistor |
| 3DD102C | Silicon NPN Power Transistor |
| 3DD101A | Silicon NPN Power Transistor |
| 3DD101B | Silicon NPN Power Transistor |
| 3DD15 | Silicon NPN Power Transistor |
| 3DD155 | Silicon NPN Power Transistor |
| 3DD15A | Silicon NPN Power Transistor |
| 3DD15B | Silicon NPN Power Transistor |
| 3DD15C | Silicon NPN Power Transistor |