3DD102C - Silicon NPN Power Transistor

Product Overview

Inchange Semiconductor

Datasheet Details

Part number	3DD102C
Manufacturer	Inchange Semiconductor
File Size	209.37 KB
Description	Silicon NPN Power Transistor
Datasheet	3DD102C Datasheet
Additional preview pages of the 3DD102C datasheet.

Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.) DC Current Gain- : hFE= 20(Min.)@IC= 2A Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 2.5A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier , DC Transform T-Shirt SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 4 V IC

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Published: Nov 22, 2016 |