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3DD3997 - NPN Transistor

General Description

High Switching Speed High Breakdown Voltage- : V(BR)CBO= 1200V(Min) 100% avalanche tested

performance and reliable operation.

High frequency switching power supply High frequency power transform Commonly

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isc Silicon NPN Power Transistor DESCRIPTION ·High Switching Speed ·High Breakdown Voltage- : V(BR)CBO= 1200V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·High frequency switching power supply ·High frequency power transform ·Commonly power amplifier circuit ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 30 A ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 60 A 250 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 3DD3997 isc website：www.iscsemi.