3DD5606 Overview
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A ;IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 2A ;IB= 0.4A ICBO Collector Cutoff Current VCB= 1600V; IE=0 IEBO Emitter Cutoff Current VEB= 9V;.
