3DD7D
3DD7D is NPN Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min)
- Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.2V(Max) @IC= 3.75A
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for power amplifier, low speed switching and regulated power supply applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation @ TC=75℃
Junction Temperature
℃
Tstg
Storage Temperature Range
-55~175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 1.33 ℃/W
3DD7D isc website：.iscsemi.cn...
