| Part number | 3DD7D |
|---|---|
| Datasheet | 3DD7D-INCHANGE.pdf |
| File Size | 198.09 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 3.75A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier, low speed switching and regulated power supply applications.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
3DD741A8 | Silicon NPN Transistor | Huajing Microelectronics |
|
3DD742A8 | Silicon NPN Transistor | Huajing Microelectronics |
|
3DD7525A3 | Silicon NPN bipolar transistor | Huajing Microelectronics |
 |
3DD7A | Silicon NPN Power Transistor | Inchange Semiconductor |
|
3DD7B | Silicon NPN Power Transistor | Inchange Semiconductor |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 3DD100A | NPN Transistor |
| 3DD100B | NPN Transistor |
| 3DD100C | NPN Transistor |
| 3DD100D | NPN Transistor |
| 3DD100E | NPN Transistor |
| 3DD101C | NPN Transistor |
| 3DD101D | NPN Transistor |
| 3DD101E | NPN Transistor |
| 3DD102D | NPN Transistor |
| 3DD103E | NPN Transistor |
