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3DD7D Datasheet Preview

3DD7D Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min)
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.2V(Max) @IC= 3.75A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for power amplifier, low speed switching and
regulated power supply applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
250
V
VCEO
Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation
@ TC=75
TJ
Junction Temperature
7.5
A
75
W
175
Tstg
Storage Temperature Range
-55~175
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.33 /W
3DD7D
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark




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3DD7D Datasheet Preview

3DD7D Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 3mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 2mA; IC= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 3mA; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3.75A; IB= 0.38A
ICEO
Collector Cutoff Current
VCE= 30V; IB= 0
hFE
DC Current Gain
IC= 3.75A; VCE= 10V
3DD7D
MIN TYP. MAX UNIT
200
V
5
V
250
V
1.2
V
1.0 mA
15
180
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark



Part Number 3DD7D
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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