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3DD7A - Silicon NPN Power Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 3.75A APPLICATIONS

regulated power supply applications.

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Full PDF Text Transcription for 3DD7A (Reference)

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD7A DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Collector-...

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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 3.75A APPLICATIONS ·Designed for power amplifier, low speed switching and regulated power supply applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous Collector Power Dissipation PC @ TC=75℃ TJ Junction Temperature Tstg Storage Temperature Range 7.5 A 75 W 175 ℃ -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to C

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