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3DD7F - Silicon NPN Power Transistor

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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 3.75A APPLICATIONS

regulated power supply applications.

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Datasheet Details

Part number 3DD7F
Manufacturer Inchange Semiconductor
File Size 185.57 KB
Description Silicon NPN Power Transistor
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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD7F DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 3.75A APPLICATIONS ·Designed for power amplifier, low speed switching and regulated power supply applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous Collector Power Dissipation PC @ TC=75℃ TJ Junction Temperature Tstg Storage Temperature Range 7.5 A 75 W 175 ℃ -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.33 ℃/W isc website：www.
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