3DD7G - Silicon NPN Power Transistor

Product Overview

Inchange Semiconductor

Datasheet Details

Part number	3DD7G
Manufacturer	Inchange Semiconductor
File Size	185.84 KB
Description	Silicon NPN Power Transistor
Datasheet	3DD7G Datasheet
Additional preview pages of the 3DD7G datasheet.

Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 3.75A APPLICATIONS Designed for power amplifier, low speed switching and regulated power supply applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous Collector Power Dissipation PC @ TC=75℃ TJ

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Published: Jun 26, 2016 |