3DD880X - NPN Transistor

Inchange Semiconductor

General Description

X: DC Current Gain -hFE = 55-75@ IC= 0.5A Collector-Emitter Breakdown Voltage- : V(BR) CEO= 100V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

applications.

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3DD880X npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	3DD880X
Manufacturer	Inchange Semiconductor
File Size	204.66 KB
Description	NPN Transistor
Datasheet	3DD880X Datasheet

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isc Silicon NPN Power Transistors DESCRIPTION ·X: DC Current Gain -hFE = 55-75@ IC= 0.5A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 100V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and switching applications.