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INCHANGE

3DD9B Datasheet Preview

3DD9B Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
3DD9B
DESCRIPTION
·With TO-3 packaging
·Large collector current
·Low collector saturation voltage
·High power dissipation
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in DC-DC converter
·Driver of solenoid or motor
·For audio amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
15
A
PD
Total Power Dissipation@TC=75
150
W
TJ
Max.Junction Temperature
175
Tstg
Storage Temperature
-55~175
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
0.66
UNIT
/W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

3DD9B Datasheet Preview

3DD9B Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
3DD9B
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVCBO Collector-Base Sustaining Voltage IC= 10mA; IE= 0
BVCEO Collector-Emitter Sustaining Voltage IC= 5mA; IB= 0
BVEBO Emitter-Base Sustaining Voltage
IE= 10mA; IC=0
VCE(sat) Collector-Emitter Saturation Voltage IC= 7.5A; IB= 0.75A
VBE(sat) Collector-Emitter Saturation Voltage IC= 7.5A; IB= 0.75A
ICEO
Collector Cutoff Current
VCE=50V; IE= 0
hFE
DC Current Gain
IC= 7.5A; VCE= 5V
MIN MAX UNIT
100
V
100
V
5
V
1.5
V
1.8
V
2.0
mA
15
120
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number 3DD9B
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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3DD9B Datasheet PDF





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