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40TPS08A Datasheet Thyristor

Manufacturer: Inchange Semiconductor

Overview: isc Thyristors 40TPS08A.

General Description

·Long-term stability ·Thyristor for line frequency ·Planar passivated chip ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Be used with Vishay HPP input diodes, switches and output rectifiers which are available in identical package outlines.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(AV) Average forward current @Tc=79℃ IT(RMS) RMS on-state current ITSM Surge non-repetitive on-state current @tp=10ms PG(AV) Average gate power dissipation Tj Operating junction temperature Tstg Storage temperature MIN 1200 1200 35 55 500 1 -40~125 -40~150 UNIT V V A A A W ℃ ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VRM=VRRM IDRM Repetitive peak off-state current VDM=VDRM Tj=25℃ Tj=125℃ VTM On-state voltage ITM= 110A IGT Gate-trigger current VD=12V RL=33Ω VGT Gate-trigger voltage VD=12V RL=33Ω Rth(j-c) Thermal resistance Junction to case MIN MAX UNIT 0.5 10 mA 1.85 V 150 mA 2.5 V 0.6 ℃/W isc website:www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors 40TPS08A NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.

The information contained herein is presented only as a guide for the applications of our products.

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