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8050 - NPN Transistor

Description

With SOT-23 packaging High collector-base voltage Low saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio output stage and converters/inverters circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER

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isc Silicon NPN Power Transistor DESCRIPTION ·With SOT-23 packaging ·High collector-base voltage ·Low saturation voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio output stage and converters/inverters circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 8050 VALUE UNIT 40 V 25 V 5 V 1.5 A 0.3 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.
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