8050
DESCRIPTION
- With SOT-23 packaging
- High collector-base voltage
- Low saturation voltage
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Audio output stage and converters/inverters circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation @ TC=25℃
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
℃
-55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BVCBO
Collector-Base Breakdown Voltage
IC= 0.1m A ; IE=...
