8050 Datasheet and Specifications PDF

The 8050 is a NPN Transistor.

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Part Number8050 Datasheet
ManufacturerSEMTECH
Overview ST 8050 (1.5A) NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into. IC=5mA at VCE=1V, IC=100mA at VCE=1V, IC=800mA Collector Cutoff Current at VCB=35V Emitter Cutoff Current at VBE=6V Collector Saturation Voltage at IC=800mA, IB=80mA Base Saturation Voltage at IC=800mA, IB=80mA Collector Emitter Breakdown Voltage at IC=2mA Collector Base Breakdown Voltage at IC=100µ.
Part Number8050 Datasheet
DescriptionNPN Transistor
ManufacturerFairchild Semiconductor
Overview SS8050 — NPN Epitaxial Silicon Transistor November 2014 SS8050 NPN Epitaxial Silicon Transistor Features • 2 W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to.
* 2 W Output Amplifier of Portable Radios in Class B Push-pull Operation.
* Complimentary to SS8550
* Collector Current: IC = 1.5 A 1 TO-92 1. Emitter 2. Base 3. Collector Ordering Information Part Number SS8050BBU SS8050CBU SS8050CTA SS8050DBU SS8050DTA Top Mark S8050 S8050 S8050 S8050 S8050 .
Part Number8050 Datasheet
DescriptionNPN Transistor
ManufacturerMicro Electronics
Overview . .
Part Number8050 Datasheet
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·With SOT-23 packaging ·High collector-base voltage ·Low saturation voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio output stage and con. e Breakdown Voltage IE= 0.1mA ; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 0.8A; IB= 0.08A 0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 0.8A; IB= 0.08A 1.2 V ICBO Collector Cutoff Current VCB= 40V ; IE= 0 0.1 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.1 .