Inchange Semiconductor 8050
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.8050 Specifications
- Current Rating : 1.5A
- Voltage Rating : 2.85kV
Source:
Octopart
DESCRIPTION
●With SOT-23 packaging●High collector-base voltage
●Low saturation voltage
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Audio output stage and converters/inverters circuitsABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 8050 VALUE UNIT 40 V 25 V 5 V 1.5 A 0.3 W 150 ℃ -55~150 ℃ isc website: 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 8050ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BVCBO Collector-Base Breakdown Voltage IC= 0.1mA ; IE= 0 40 V BVCEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 25 V BVEBO Emitter-Base Breakdown Voltage IE= 0.1mA ; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 0.8A; IB=...