With SOT-23 packaging
High collector-base voltage
Low saturation voltage
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Audio output stage and converters/inverters circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
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isc Silicon NPN Power Transistor
DESCRIPTION ·With SOT-23 packaging ·High collector-base voltage ·Low saturation voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Audio output stage and converters/inverters circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
8050
VALUE UNIT
40
V
25
V
5
V
1.5
A
0.3
W
150
℃
-55~150 ℃
isc website:www.iscsemi.