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AOB2140L - N-Channel MOSFET

General Description

Drain Current ID= 195A@ TC=25℃ Drain Source Voltage : VDSS=40V(Min) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for high current, high speed switching, switch mode power supplies (SMPS).

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isc N-Channel MOSFET Transistor ·DESCRIPTION ·Drain Current ID= 195A@ TC=25℃ ·Drain Source Voltage : VDSS=40V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Designed for high current, high speed switching, switch mode power supplies (SMPS). ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 40 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 195 A IDM Pulse Drain Current 680 A Ptot Total Dissipation@TC=25℃ 250 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature Range -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.