Datasheet Details
| Part number | AOI1N60 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 269.32 KB |
| Description | N-Channel MOSFET |
| Datasheet | AOI1N60-INCHANGE.pdf |
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Overview: isc N-Channel MOSFET Transistor AOI1N60.
| Part number | AOI1N60 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 269.32 KB |
| Description | N-Channel MOSFET |
| Datasheet | AOI1N60-INCHANGE.pdf |
|
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·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 1.3 A IDM Drain Current-Single Pluse 4 A PD Total Dissipation @TC=25℃ 45 W TJ Max.
Operating Junction Temperature -50~150 ℃ Tstg Storage Temperature -50~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 2.8 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor AOI1N60 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
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