Isc N-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
VGS(th)
Gate Threshold Voltage
VDS=±20V; ID=0.25mA
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=20A
IGSS
IDSS
VSDF
Gate-Source Leakage Current
Drain-Source Leakage Current
Diode forward voltage
VGS= ±20V;VDS= 0V
VDS=60V; VGS= 0V;Tc=25℃
Tc=55℃
ISD=1A, VGS = 0 V
AOD4130
MIN
MAX UNIT
60
V
1.6
2.8
V
24
mΩ
±0.1
μA
1
5
μA
1
V
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ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
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