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AOI4130 Datasheet Preview

AOI4130 Datasheet

N-Channel MOSFET

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Isc N-Channel MOSFET Transistor
·FEATURES
·With TO-251(IPAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·Load switch
·Power management
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
60
V
VGSS
ID
IDM
Gate-Source Voltage
Drain Current-ContinuousTc=25
Tc=100
Drain Current-Single Pulsed
±20
V
30
20
A
74
A
PD
Total Dissipation @TC=25
52
W
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX
2.9
UNIT
/W
AOI4130
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark




INCHANGE

AOI4130 Datasheet Preview

AOI4130 Datasheet

N-Channel MOSFET

No Preview Available !

Isc N-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
VGS(th)
Gate Threshold Voltage
VDS=±20V; ID=0.25mA
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=20A
IGSS
IDSS
VSDF
Gate-Source Leakage Current
Drain-Source Leakage Current
Diode forward voltage
VGS= ±20V;VDS= 0V
VDS=60V; VGS= 0V;Tc=25
Tc=55
ISD=1A, VGS = 0 V
AOD4130
MIN
MAX UNIT
60
V
1.6
2.8
V
24
mΩ
±0.1
μA
1
5
μA
1
V
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark


Part Number AOI4130
Description N-Channel MOSFET
Maker INCHANGE
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