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AOT210L - N-Channel MOSFET

Key Features

  • Low drain-source on-resistance: RDS(on) ≤2.9mΩ.
  • High frequency switching.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel MOSFET Transistor ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤2.9mΩ ·High frequency switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·For fast switching power supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 105 IDM Drain Current-Single Pulsed 400 PD Total Dissipation @TC=25℃ 176 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.85 65 UNIT ℃/W ℃/W AOT210L isc website：www.