isc N-Channel MOSFET Transistor
AOT4S60
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBO
L
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA
MIN TYPE MAX UNIT
600
V
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
VDS= 5V; ID= 0.25mA
VGS= 10V; ID=2A
VGS= 10V; ID=2A@TJ=125℃
IGSS
Gate-Body Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 600V; VGS= 0
VDS= 480V; VGS= 0@TJ=150℃
VSD
Forward On-Voltage
IS= 2A; VGS= 0
2.9
4.1
V
0.9
2.4
Ω
±100 nA
10
1
μA
0.81
V
NOTICE：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
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