isc N-Channel MOSFET Transistor
AOT4S60
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBO
L
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA
MIN TYPE MAX UNIT
600
V
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
VDS= 5V; ID= 0.25mA
VGS= 10V; ID=2A
VGS= 10V; ID=2A@TJ=125℃
IGSS
Gate-Body Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 600V; VGS= 0
VDS= 480V; VGS= 0@TJ=150℃
VSD
Forward On-Voltage
IS= 2A; VGS= 0
2.9
4.1
V
0.9
2.4
Ω
±100 nA
10
1
μA
0.81
V
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notification. The information contained herein is presented only as a guide for the applications of
our products.
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