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APT11N80BC3G Datasheet

Manufacturer: Inchange Semiconductor
APT11N80BC3G datasheet preview

APT11N80BC3G Details

Part number APT11N80BC3G
Datasheet APT11N80BC3G-INCHANGE.pdf
File Size 371.87 KB
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET
APT11N80BC3G page 2

APT11N80BC3G Overview

·Designed for use in switch mode power supplies and general purpose applications. RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 11 A IDM Drain Current-Single Pluse 33 A PD Total Dissipation @TC=25℃ 156 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL...

APT11N80BC3G Key Features

  • Drain Current -ID=11A@ TC=25℃ -Drain Source Voltage

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