APT11N80BC3G
Description
.
Key Features
- Drain Current –ID=11A@ TC=25℃
- Drain Source Voltage
- Static Drain-Source On-Resistance
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device
- Part: APT11N80BC3G
- Description: N-Channel MOSFET
- Category: MOSFET
- Manufacturer: Inchange Semiconductor
- Size: 371.87 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| APT11N80BC3 | Advanced Power Technology | Super Junction MOSFET |
| APT11N80KC3 | Advanced Power Technology | Super Junction MOSFET |