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APT11N80BC3G - N-Channel MOSFET

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General Description

·Designed for use in switch mode power supplies and general purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 11 A IDM Drain Current-Single Pluse 33 A PD Total Dissipation @TC=25℃ 156 W TJ Max.

Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.42 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor APT11N80BC3G ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;

Overview

isc N-Channel MOSFET Transistor APT11N80BC3G.

Key Features

  • Drain Current.
  • ID=11A@ TC=25℃.
  • Drain Source Voltage- : VDSS=800V(Min).
  • Static Drain-Source On-Resistance : RDS(on) =0.45Ω(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Microsemi Logo APT11N80BC3G Super Junction MOSFET Microsemi
Advanced Power Technology Logo APT11N80BC3 Super Junction MOSFET Advanced Power Technology

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