Datasheet Details
| Part number | APT20M22LVR |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 250.00 KB |
| Description | N-Channel MOSFET |
| Download | APT20M22LVR Download (PDF) |
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| Part number | APT20M22LVR |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 250.00 KB |
| Description | N-Channel MOSFET |
| Download | APT20M22LVR Download (PDF) |
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·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 100 A IDM Drain Current-Single Pluse 400 A PD Total Dissipation @TC=25℃ 520 W TJ Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.24 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor APT20M22LVR ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
isc N-Channel MOSFET Transistor APT20M22LVR.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
APT20M22LVR | N-Channel MOSFET | Advanced Power Technology |
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APT20M22LVFR | N-Channel MOSFET | Advanced Power Technology |
|
APT20M22B2VFR | N-Channel MOSFET | Advanced Power Technology |
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APT20M22B2VR | N-Channel MOSFET | Advanced Power Technology |
|
APT20M22JVFR | N-Channel MOSFET | Advanced Power Technology |
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