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APT5024BFLL Datasheet PDF

Inchange Semiconductor APT5024BFLL

The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Part No. APT5024BFLL
Datasheet APT5024BFLL Download
Manufacturer
Inchange Semiconductor
Description N-Channel MOSFET
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APT5024BFLL datasheet page 1 preview

FEATURES

●Drain Current –ID=22A@ TC=25℃
●Drain Source Voltage- : VDSS=500V(Min)
●Static Drain-Source On-Resistance : RDS(on) =0.24Ω(Max)
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation

DESCRIPTION

●Designed for use in switch mode power supplies and general purpose applications.

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 22 A IDM Drain Current-Single Pluse 88 A PD Total Dissipation @TC=25℃ 265 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.47 ℃/W APT5024BFLL isc website: 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor APT5024BFLL

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltag...
APT5024BFLL page 2 preview