APT5024BFLL Datasheet | Advanced Power Technology

APT5024BFLL APT5024SFLL 500V 22A 0.240Ω POWER MOS 7 R FREDFET BFLL Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering aanlodn Qg g.wi Pthoweexrc Mep Oti Son7a®llcyomfabsitnesswliotcwheinr gcosnpdeuectdiosn and switching inherent with RDS(ON) losses APT's patented metal gate structure. TO-247 D3PAK SFLL - Lower Input Capacitance - Lower Miller Capacitance - Lower Gate Charge, Qg MAXIMUM RATINGS - Increased Power Dissipation - Easier To Drive - TO-247 or Surface Mount D3PAK Package - FAST RECOVERY BODY DIODE All Ratings: TC = 25°C unless otherwise specified. Symbol VDSS ID IDM VGS VGSM TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 APT5024BFLL_SFLL 500 22 88 ±30 ±40 265 2.12 -55 to 150 300 22 30 960 UNIT Volts Amps Volts Watts W/°C °C Amps m J STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 11A) Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1m A) 500 22 0.240 250 1000...