APT5024BFLL - N-Channel MOSFET

Inchange Semiconductor

General Description

purpose applications.

Key Features

Drain Current.
ID=22A@ TC=25℃.
Drain Source Voltage- : VDSS=500V(Min).
Static Drain-Source On-Resistance : RDS(on) =0.24Ω(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

APT5024BFLL n-channel mosfet by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	APT5024BFLL
Manufacturer	Inchange Semiconductor
File Size	371.01 KB
Description	N-Channel MOSFET
Datasheet	APT5024BFLL Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
APT5024BFLL	Power MOSFET	Advanced Power Technology
APT5024BFLL	Power MOSFET	Microsemi
APT5024BLL	Power MOSFET	Advanced Power Technology
APT5024BLLG	Power MOSFET	Advanced Power Technology
APT5024BVFR	Power MOSFET	Advanced Power Technology

More Datasheets from Inchange Semiconductor

Part Number	Description
APT5024BLL	N-Channel MOSFET
APT5024BVFR	N-Channel MOSFET
APT5024BVR	N-Channel MOSFET
APT5020BVFR	N-Channel MOSFET
APT5020BVR	N-Channel MOSFET
APT5028BVR	N-Channel MOSFET
APT5010B2FLL	N-Channel MOSFET
APT5010B2LL	N-Channel MOSFET
APT5010LFLL	N-Channel MOSFET
APT5010LLL	N-Channel MOSFET

Full PDF Text Transcription for APT5024BFLL (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for APT5024BFLL. For precise diagrams, tables, and layout, please refer to the original PDF.

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=22A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.24Ω(Max) ·...

View more extracted text

S=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.24Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 22 A IDM Drain Current-Single Pluse 88 A PD Total Dissipation @TC=25℃ 265 W TJ Max.