APT50M80B2VFR Key Features
- Drain Current -ID= 58A@ TC=25℃ -Drain Source Voltage
- Part: APT50M80B2VFR
- Manufacturer: Inchange Semiconductor (official site)
- Size: 371.36 KB
Other APT50M80B2VFR Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Advanced Power Technology |
APT50M80B2VFR | Power MOSFET |
|
Advanced Power Technology |
APT50M80B2VR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
|
Advanced Power Technology |
APT50M80B2LC | Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs. |
APT50M80B2VFR Description
·Designed for use in switch mode power supplies and general purpose applications. RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 58 A IDM Drain Current-Single Pluse 232 A PD Total Dissipation @TC=25℃ 625 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL...