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APT8065BVR Datasheet

Manufacturer: Inchange Semiconductor
APT8065BVR datasheet preview

Datasheet Details

Part number APT8065BVR
Datasheet APT8065BVR-INCHANGE.pdf
File Size 371.23 KB
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET
APT8065BVR page 2

APT8065BVR Overview

·Designed for use in switch mode power supplies and general purpose applications. RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 13 A IDM Drain Current-Single Pluse 52 A PD Total Dissipation @TC=25℃ 280 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL...

APT8065BVR Key Features

  • Drain Current -ID=13A@ TC=25℃ -Drain Source Voltage

APT8065BVR from other manufacturers

See all manufacturers

Brand Logo Part Number Description Other Manufacturers
Advanced Power Technology Logo APT8065BVR Power MOSFET Advanced Power Technology
VBsemi Logo APT8065BVR N-Channel 800V Power MOSFET VBsemi
Advanced Power Technology Logo APT8065BVFR Power MOSFET Advanced Power Technology
Advanced Power Technology Logo APT8065AVR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Advanced Power Technology
Advanced Power Technology Logo APT8065SVR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Advanced Power Technology
Inchange Semiconductor logo - Manufacturer

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