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APT8065BVR - N-Channel 800V Power MOSFET

Key Features

  • Low figure-of-merit (FOM) Ron x Qg.
  • Low input capacitance (Ciss).
  • Reduced switching and conduction losses.
  • Ultra low gate charge (Qg).
  • Avalanche energy rated (UIS).

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Datasheet Details

Part number APT8065BVR
Manufacturer VBsemi
File Size 252.45 KB
Description N-Channel 800V Power MOSFET
Datasheet download datasheet APT8065BVR Datasheet

Full PDF Text Transcription for APT8065BVR (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for APT8065BVR. For precise diagrams, and layout, please refer to the original PDF.

APT8065BVR-VB www.VBsemi.com APT8065BVR-VB Datasheet N-Channel 800 V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC...

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ET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 800 VGS = 10 V 73 9 17 Single 0.