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APT8065BVR

Manufacturer: Inchange Semiconductor

APT8065BVR datasheet by Inchange Semiconductor.

APT8065BVR datasheet preview

APT8065BVR Datasheet Details

Part number APT8065BVR
Datasheet APT8065BVR-INCHANGE.pdf
File Size 371.23 KB
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET
APT8065BVR page 2

APT8065BVR Overview

·Designed for use in switch mode power supplies and general purpose applications. RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 13 A IDM Drain Current-Single Pluse 52 A PD Total Dissipation @TC=25℃ 280 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL...

APT8065BVR Key Features

  • Drain Current -ID=13A@ TC=25℃ -Drain Source Voltage

APT8065BVR from other manufacturers

View APT8065BVR datasheet index

Brand Logo Part Number Description Other Manufacturers
Advanced Power Technology Logo APT8065BVR Power MOSFET Advanced Power Technology
VBsemi Logo APT8065BVR N-Channel 800V Power MOSFET VBsemi
Advanced Power Technology Logo APT8065BVFR Power MOSFET Advanced Power Technology
Advanced Power Technology Logo APT8065AVR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Advanced Power Technology
Advanced Power Technology Logo APT8065SVR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Advanced Power Technology
Inchange Semiconductor logo - Manufacturer

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