Datasheet Details
| Part number | BD117 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 189.03 KB |
| Description | NPN Transistor |
| Download | BD117 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor BD117.
| Part number | BD117 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 189.03 KB |
| Description | NPN Transistor |
| Download | BD117 Download (PDF) |
|
|
|
·Excellent Safe Operating Area ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.6V(Max)@ IC = 3A ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A IB Base Current-Continuous 2 A PC Collector Power Dissipation@TC=50℃ 30 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors INCHANGE Semiconductor BD117 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
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