BD112 datasheet by Inchange Semiconductor.
| Part number | BD112 |
|---|---|
| Datasheet | BD112-INCHANGE.pdf |
| File Size | 175.78 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
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·Excellent Safe Operating Area ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC = 5A ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
View all Inchange Semiconductor datasheets
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