Inchange Semiconductor BD112
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | BD112 |
|---|---|
| Datasheet | BD112 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Excellent Safe Operating Area●Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min)
●Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC = 5A
●Good Linearity of hFE
●Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS
●Designed for general-purpose switching and amplifier applicationsABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 15 A IB Base Current-Continuous 2 A PC Collector Power Dissipation@TC=75℃ 15 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors INCHANGE Semiconductor BD112ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA ; IB=0...