BD112
BD112 is NPN Transistor manufactured by Inchange Semiconductor.
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
DESCRIPTION
- Excellent Safe Operating Area
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
- Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.0V(Max)@ IC = 5A
- Good Linearity of hFE
- Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS
- Designed for general-purpose switching and amplifier...
