BD112 - NPN Transistor

Inchange Semiconductor

General Description

Excellent Safe Operating Area Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC = 5A Good Linearity of hFE

and reliable operation.

📥 Download Datasheet

BD112 npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	BD112
Manufacturer	Inchange Semiconductor
File Size	175.78 KB
Description	NPN Transistor
Datasheet	BD112 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
BD115	Small Signal Transistors	Central Semiconductor
BD115	NPN Silicon Transistor	TRANSYS
BD115	Bipolar NPN Device	Semelab
BD11600NUX	USB Switch	ROHM
BD11670GWL	USB Switch	ROHM

Other Datasheets by Inchange Semiconductor

Part Number	Description
BD116	NPN Transistor
BD117	NPN Transistor
BD131	NPN Transistor
BD132	PNP Transistor
BD135	NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

isc Silicon NPN Power Transistor INCHANGE Semiconductor BD112 DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC = 5A ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.